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BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series Dual General Purpose Transistors
NPN/PNP Duals (Complimentary)
These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications.
Features
(3)
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(1)
Q1
Q2
* Pb-Free Package is Available
MAXIMUM RATINGS - NPN
Rating Collector-Emitter Voltage BC846 BC847 BC848 BC846 BC847 BC848 Symbol VCEO Value 65 45 30 80 50 30 6.0 100 Unit V
(4)
(5)
(6)
MARKING DIAGRAM
6 SOT-363 CASE 419B STYLE 1 1 xx = Device Code d = Date Code
Collector-Base Voltage
VCBO
V 1 V mAdc
XXd
Emitter-Base Voltage Collector Current - Continuous
VEBO IC
MAXIMUM RATINGS - PNP
Rating Collector-Emitter Voltage BC846 BC847 BC848 BC846 BC847 BC848 Symbol VCEO Value -65 -45 -30 -80 -50 -30 -5.0 -100 Unit V
ORDERING INFORMATION
V Device BC846BPDW1T1 V mAdc BC847BPDW1T1 Mark Package BB BF Shipping
Collector-Base Voltage
VCBO
SOT-363 3000 Units/Reel SOT-363 3000 Units/Reel SOT-363 3000 Units/Reel (Pb-Free) SOT-363 3000 Units/Reel SOT-363 3000 Units/Reel
Emitter-Base Voltage Collector Current - Continuous
VEBO IC
BC847BPDW1T1G BF BC847CPDW1T1 BC848CPDW1T1
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
BG BL
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation Per Device FR-5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature 1. FR-5 = 1.0 x 0.75 x 0.062 in. Symbol PD Max 380 250 3.0 RqJA TJ, Tstg 328 -55 to +150 Unit mW For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
mW/C C/W C
(c) Semiconductor Components Industries, LLC, 2004
1
June, 2004 - Rev. 3
Publication Order Number: BC846BPDW1T1/D
BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series
ELECTRICAL CHARACTERISTICS (NPN) (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = 10 mA) V(BR)CEO BC846 Series BC847 Series BC848 Series V(BR)CES BC846 Series BC847B Only BC848 Series V(BR)CBO BC846 Series BC847 Series BC848 Series V(BR)EBO BC846 Series BC847 Series BC848 Series ICBO 6.0 6.0 5.0 - - - - - - - - - - 15 5.0 nA mA 80 50 30 - - - - - - V 80 50 30 - - - - - - V 65 45 30 - - - - - - V V Symbol Min Typ Max Unit
Collector -Emitter Breakdown Voltage (IC = 10 mA, VEB = 0)
Collector -Base Breakdown Voltage (IC = 10 mA)
Emitter -Base Breakdown Voltage (IE = 1.0 mA)
Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150C) ON CHARACTERISTICS DC Current Gain (IC = 10 mA, VCE = 5.0 V)
hFE BC846B, BC847B BC847C, BC848C BC846B, BC847B BC847C, BC848C VCE(sat) VBE(sat) VBE(on) - - 200 420 - - - - 580 - 150 270 290 520 - - 0.7 0.9 660 - - - 475 800 0.25 0.6 - - 700 770
-
(IC = 2.0 mA, VCE = 5.0 V)
Collector -Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector -Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base -Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base -Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base -Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base -Emitter Voltage (IC = 10 mA, VCE = 5.0 V) SMALL-SIGNAL CHARACTERISTICS Current -Gain - Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
V V mV
fT Cobo NF
100 - -
- - -
- 4.5 10
MHz pF dB
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BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series
ELECTRICAL CHARACTERISTICS (PNP) (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = -10 mA) V(BR)CEO BC846 Series BC847 Series BC848 Series V(BR)CES BC846 Series BC847 Series BC848 Series V(BR)CBO BC846 Series BC847 Series BC848 Series V(BR)EBO BC846 Series BC847 Series BC848 Series ICBO -5.0 -5.0 -5.0 - - - - - - - - - - -15 -4.0 nA mA -80 -50 -30 - - - - - - V -80 -50 -30 - - - - - - V -65 -45 -30 - - - - - - V V Symbol Min Typ Max Unit
Collector -Emitter Breakdown Voltage (IC = -10 mA, VEB = 0)
Collector -Base Breakdown Voltage (IC = -10 mA)
Emitter -Base Breakdown Voltage (IE = -1.0 mA)
Collector Cutoff Current (VCB = -30 V) Collector Cutoff Current (VCB = -30 V, TA = 150C) ON CHARACTERISTICS DC Current Gain (IC = -10 mA, VCE = -5.0 V)
hFE BC846B, BC847B BC847C, BC848C BC846B, BC847B BC847C, BC848C VCE(sat) - - VBE(sat) - - VBE(on) -0.6 - - - -0.75 -0.82 -0.7 -0.9 - - - - -0.3 -0.65 - - 200 420 150 270 290 520 - - 475 800
-
(IC = -2.0 mA, VCE = -5.0 V)
Collector -Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) (IC = -100 mA, IB = -5.0 mA) Base -Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) (IC = -100 mA, IB = -5.0 mA) Base -Emitter On Voltage (IC = -2.0 mA, VCE = -5.0 V) (IC = -10 mA, VCE = -5.0 V) SMALL-SIGNAL CHARACTERISTICS Current -Gain - Bandwidth Product (IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = -10 V, f = 1.0 MHz) Noise Figure (IC = -0.2 mA, VCE = -5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
V
V
V
fT Cob NF
100 - -
- - -
- 4.5 10
MHz pF dB
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BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series
TYPICAL NPN CHARACTERISTICS - BC846
1.0 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 5 V TA = 25C 2.0 1.0 0.5 0.2 0.1 0.2 10 100 1.0 IC, COLLECTOR CURRENT (mA) V, VOLTAGE (VOLTS) TA = 25C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4
0.2 VCE(sat) @ IC/IB = 10 0 0.2 0.5 1.0 10 20 2.0 5.0 IC, COLLECTOR CURRENT (mA) 50 100 200
Figure 1. DC Current Gain
Figure 2. "On" Voltage
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
TA = 25C 1.6 20 mA 1.2 IC = 10 mA 50 mA 100 mA 200 mA
VB, TEMPERATURE COEFFICIENT (mV/ C)
2.0
-1.0
-1.4
-1.8 qVB for VBE -2.2 -55C to 125C
0.8
0.4
-2.6
0
0.02
0.05
0.1
0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA)
5.0
10
20
-3.0
0.2
0.5
10 20 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA)
50
100
200
Figure 3. Collector Saturation Region
Figure 4. Base-Emitter Temperature Coefficient
TA = 25C C, CAPACITANCE (pF) 20 Cib 10 6.0 4.0 Cob
f T, CURRENT-GAIN - BANDWIDTH PRODUCT
40
500
VCE = 5 V TA = 25C
200 100 50 20
2.0
0.1
0.2
0.5
1.0 2.0 10 20 5.0 VR, REVERSE VOLTAGE (VOLTS)
50
100
1.0 5.0 10 50 100 IC, COLLECTOR CURRENT (mA)
Figure 5. Capacitance
Figure 6. Current-Gain - Bandwidth Product
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BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series
TYPICAL PNP CHARACTERISTICS -- BC846
-1.0 hFE , DC CURRENT GAIN (NORMALIZED) VCE = -5.0 V TA = 25C 2.0 1.0 0.5 0.2 -0.1 -0.2 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (AMP) V, VOLTAGE (VOLTS) TJ = 25C -0.8 VBE(sat) @ IC/IB = 10 -0.6 VBE @ VCE = -5.0 V
-0.4
-0.2 VCE(sat) @ IC/IB = 10 0 -0.2 -0.5 -50 -100 -200 -5.0 -10 -20 -1.0 -2.0 IC, COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain
Figure 8. "On" Voltage
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VB, TEMPERATURE COEFFICIENT (mV/ C)
-2.0
-1.0
-1.6 IC = -10 mA -20 mA -50 mA -100 mA -200 mA
-1.4
-1.2
-1.8
qVB for VBE
-55C to 125C
-0.8
-2.2
-0.4 TJ = 25C 0 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 IB, BASE CURRENT (mA) -5.0 -10 -20
-2.6
-3.0 -0.2
-0.5 -1.0
-50 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mA)
-100 -200
Figure 9. Collector Saturation Region
Figure 10. Base-Emitter Temperature Coefficient
f T, CURRENT-GAIN - BANDWIDTH PRODUCT
40 TJ = 25C C, CAPACITANCE (pF) 20 Cib
500
VCE = -5.0 V
200 100 50 20 -100 -1.0 -10 IC, COLLECTOR CURRENT (mA)
10 8.0 6.0 4.0 2.0 -0.1 -0.2 Cob
-0.5
-1.0 -2.0 -5.0 -10 -20 VR, REVERSE VOLTAGE (VOLTS)
-50 -100
Figure 11. Capacitance
Figure 12. Current-Gain - Bandwidth Product
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BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series
TYPICAL NPN CHARACTERISTICS - BC847 SERIES & BC848 SERIES
2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.8 0.6 0.4 0.3 0.2 VCE = 10 V TA = 25C V, VOLTAGE (VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.2 0.5 50 2.0 5.0 10 1.0 20 IC, COLLECTOR CURRENT (mAdc) 100 200 0 0.1 VCE(sat) @ IC/IB = 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 70 100 VBE(on) @ VCE = 10 V TA = 25C VBE(sat) @ IC/IB = 10
Figure 13. Normalized DC Current Gain
Figure 14. "Saturation" and "On" Voltages
VCE , COLLECTOR-EMITTER VOLTAGE (V)
VB, TEMPERATURE COEFFICIENT (mV/ C)
2.0 TA = 25C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA 0.8 IC = 50 mA IC = 100 mA
1.0 -55C to +125C 1.2 1.6 2.0 2.4 2.8
0.4
0
0.02
0.1 1.0 IB, BASE CURRENT (mA)
10
20
0.2
10 1.0 IC, COLLECTOR CURRENT (mA)
100
Figure 15. Collector Saturation Region
Figure 16. Base-Emitter Temperature Coefficient
f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 400 300 200
10 7.0 C, CAPACITANCE (pF) 5.0 Cib TA = 25C
3.0 Cob 2.0
100 80 60 40 30 20 0.5 0.7 1.0
VCE = 10 V TA = 25C
1.0
0.4 0.6 0.8 1.0
2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS)
20
40
2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc)
30
50
Figure 17. Capacitances
Figure 18. Current-Gain - Bandwidth Product
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BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series
TYPICAL PNP CHARACTERISTICS -- BC847 SERIES & BC848 SERIES
2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.7 0.5 VCE = -10 V TA = 25C V, VOLTAGE (VOLTS) -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.2 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 IC, COLLECTOR CURRENT (mAdc) -100 -200 0 -0.1 -0.2 VCE(sat) @ IC/IB = 10 -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) -50 -100 VBE(on) @ VCE = -10 V TA = 25C VBE(sat) @ IC/IB = 10
0.3
Figure 19. Normalized DC Current Gain
Figure 20. "Saturation" and "On" Voltages
VB , TEMPERATURE COEFFICIENT (mV/ C)
VCE , COLLECTOR-EMITTER VOLTAGE (V)
-2.0 TA = 25C -1.6 -1.2 IC = -10 mA IC = -50 mA IC = -20 mA IC = -200 mA IC = -100 mA
1.0 -55C to +125C 1.2 1.6 2.0 2.4 2.8
-0.8
-0.4
0
-0.02
-0.1 -1.0 IB, BASE CURRENT (mA)
-10 -20
-0.2
-10 -1.0 IC, COLLECTOR CURRENT (mA)
-100
Figure 21. Collector Saturation Region
f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
Figure 22. Base-Emitter Temperature Coefficient
400 300 200 150 100 80 60 40 30 20 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 VCE = -10 V TA = 25C
10 7.0 C, CAPACITANCE (pF) 5.0 Cob Cib TA = 25C
3.0 2.0
1.0 -0.4 -0.6
-1.0
-2.0
-4.0 -6.0
-10
-20 -30 -40
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mAdc)
Figure 23. Capacitances
Figure 24. Current-Gain - Bandwidth Product
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BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series
1.0 D = 0.5 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.2 0.1 0.05 0.02 0.01 0.01 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.001 0 1.0 10 100 t, TIME (ms) 1.0 k 10 k 100 k 1.0 M
ZqJA(t) = r(t) RqJA RqJA = 328C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t)
0.1
Figure 25. Thermal Response
-200 1s IC, COLLECTOR CURRENT (mA) -100 -50 TA = 25C TJ = 25C 3 ms
-10 -5.0 -2.0 -1.0
BC558 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -5.0 -10 -30 -45 -65 -100 VCE, COLLECTOR-EMITTER VOLTAGE (V)
The safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 26 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 25. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown.
Figure 26. Active Region Safe Operating Area
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BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series
PACKAGE DIMENSIONS
SOT-363/SC-88 CASE 419B-02 ISSUE U
A G
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B-01 OBSOLETE, NEW STANDARD 419B-02. INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --- 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --- 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20
6
5
4
S
1 2 3
-B-
D 6 PL 0.2 (0.008)
M
B N
M
DIM A B C D G H J K N S
J C
STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2
H
K
SOLDERING FOOTPRINT*
0.50 0.0197
0.65 0.025 0.65 0.025 0.40 0.0157
1.9 0.0748
SCALE 20:1
mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
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BC846BPDW1T1/D

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